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PD - 9.1142
IRGBC30KD2-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Short circuit rated -10s @125C, V GE = 15V * Switching-loss rating includes all "tail" losses * HEXFRED TM soft ultrafast diodes * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated UltraFast CoPack IGBT
VCES = 600V VCE(sat) 3.8V
G E
@VGE = 15V, IC = 14A
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
SMD-220 Absolute Maximum Ratings
Parameter
VCES I C @ TC = 25C I C @ TC = 100C I CM I LM I F @ TC = 100C I FM t sc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 23 14 46 46 12 46 10 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
s V W
C
Thermal Resistance
Parameter
RJC RJC RJA RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, (PCB Mount)** Junction-to-Ambient, typical socket mount Weight
Min.
--------------------------
Typ.
-------------------2 (0.07)
Max.
1.2 2.5 40 80 ------
Units
C/W
g (oz)
** When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
IRGBC30KD2-S
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Collector-to-Emitter Breakdown Voltage 600 V(BR)CES /T J Temperature Coeff. of Breakdown Voltage---Collector-to-Emitter Saturation Voltage ---VCE(on) ------VGE(th) Gate Threshold Voltage 3.0 V GE(th)/TJ Temperature Coeff. of Threshold Voltage ---Forward Transconductance 3.3 gfe Zero Gate Voltage Collector Current ---ICES ---V FM Diode Forward Voltage Drop ------Gate-to-Emitter Leakage Current ---IGES V(BR)CES Typ. ---0.30 2.5 3.3 2.5 ----13 6.5 ------1.4 1.3 ---Max. Units Conditions ---V VGE = 0V, IC = 250A ---- V/C VGE = 0V, IC = 1.0mA 3.8 IC = 14A VGE = 15V See Fig. 2, 5 ---V IC = 23A ---IC = 14A, TJ = 150C 5.5 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 14A 250 A VGE = 0V, VCE = 600V 2500 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 12A See Fig. 13 1.6 IC = 12A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Max. Units Conditions 58 IC = 14A 13 nC VCC = 400V 23 See Fig. 8 ---TJ = 25C ---ns IC = 14A, VCC = 480V 170 VGE = 15V, RG = 23 140 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 2.4 ---s VCC = 360V, TJ = 125C VGE = 15V, RG = 23, VCPK < 500V Turn-On Delay Time ---64 ---TJ = 150C, See Fig. 9, 10, 11, 18 t d(on) Rise Time ---- 100 ---ns IC = 14A, VCC = 480V tr t d(off) Turn-Off Delay Time ---- 190 ---VGE = 15V, RG = 23 Fall Time ---- 180 ---Energy losses include "tail" and tf Total Switching Loss ---- 2.2 ---mJ diode reverse recovery. Ets Internal Emitter Inductance ---- 7.5 ---nH Measured 5mm from package LE Input Capacitance ---- 740 ---VGE = 0V Cies Coes Output Capacitance ---92 ---pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance ---- 9.4 --- = 1.0MHz Cres Diode Reverse Recovery Time ---42 60 ns TJ = 25C See Fig. t rr ---80 120 TJ = 125C 14 IF = 12A Diode Peak Reverse Recovery Current ---- 3.5 6.0 A TJ = 25C See Fig. Irr ---- 5.6 10 TJ = 125C 15 VR = 200V Diode Reverse Recovery Charge ---80 180 nC TJ = 25C See Fig. Q rr ---- 220 600 TJ = 125C 16 di/dt = 200A/ 180 s di(rec)M/dtDiode Peak Rate of Fall of Recovery ------A/s TJ = 25C See Fig. During t b ---120 Notes: ---TJ = 125C =80%(V CES), VGE=20V, L=10H, Pulse width 5.0s, VCC 17 single shot. RG = 23, ( See fig. 19 ) Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Pulse width 80s; duty factor 0.1%. Qg Qge Q gc t d(on) tr t d(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Min. ------------------------------10 Typ. 39 8.7 15 67 120 110 94 1.1 0.5 1.6 ----
IRGBC30KD2-S
15 Duty cycle: 50% TJ = 125C Tsink = 90C Gate dr ive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 21W
12
Load Current (A)
9 60% of rated voltage 6
3
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
IC , Collector-to-Emitter Current (A)
TJ = 25C TJ = 150C
10
IC , Collector-to-Emitter Current (A)
TJ = 150C
10
TJ = 25C
1
0.1 0.1 1
VGE = 15V 20s PULSE WIDTH A
10
1 5 10
VCC = 100V 5s PULSE WIDTH A
15 20
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRGBC30KD2-S
25
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
VGE = 15V
6.0
VGE = 15V 80s PULSE WIDTH
20
5.0
I C = 28A
4.0
15
3.0
10
I C = 14A
2.0
I C = 7.0A
1.0
5
0 25 50 75 100 125
A
150
0.0 -60
A
-40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature (C)
TC, Case Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
Thermal Response (Z thJC )
1
D = 0.50
0.20 0.10
P DM
0.1
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
t
1
t
2
Notes: 1. Duty fact or D = t
1
/t
2
0.01 0.00001
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
IRGBC30KD2-S
1400 20
1200
VGE , Gate-to-Emitter Voltage (V)
V GE = 0V, f = 1MHz Cies = Cge + C gc , Cce SHORTED Cres = C gc Coes = Cce + C gc
VCE = 400V I C = 14A
16
C, Capacitance (pF)
1000
C ies
800
12
C oes
600
8
400
4
200
Cres
A
1 10 100
0
0 0 10 20 30
A
40
VCE, Collector-to-Emitter Voltage (V)
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
1.80
100
Total Switching Losses (mJ)
1.76
1.72
Total Switching Losses (mJ)
VCC VGE TC IC
= 480V = 15V = 25C = 14A
RG = 23 V GE = 15V V CC = 480V
10
I C = 24A
1.68
I C = 14A
1
1.64
I C = 7.0A
1.60
1.56 0 10 20 30 40 50
A
60 0.1 -60 -40 -20 0 20 40 60 80
A 100 120 140 160
RG , Gate Resistance ()
TC, Case Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
IRGBC30KD2-S
8.0
6.0
IC , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG = 23 T C = 150C V CC = 480V V GE = 15V
100
VGE = 20V TJ = 125C
SAFE OPERATING AREA
4.0
10
2.0
0.0 0 10 20
A 30
1 1 10 100
A
1000
IC , Collector-to-Emitter Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - IF (A)
TJ = 150C
10
TJ = 125C TJ = 25C
1 0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRGBC30KD2-S
160 100
VR = 200V TJ = 125C TJ = 25C
120
VR = 200V TJ = 125C TJ = 25C
I F = 24A I F = 12A
80
I IRRM - (A)
I F = 24A
10
t rr - (ns)
I F = 12A IF = 6.0A
I F = 6.0A
40
0 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif /dt
600
10000
VR = 200V TJ = 125C TJ = 25C
VR = 200V TJ = 125C TJ = 25C
di(rec)M/dt - (A/s)
400
1000
Q RR - (nC)
IF = 6.0A
I F = 24A I F = 12A
I F = 12A
100
200
IF = 6.0A
I F = 24A
0 100
di f /dt - (A/s)
1000
10 100
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M /dt vs. dif/dt
IRGBC30KD2-S
90% Vge +Vge
Same type device as D.U.T.
Vce
Ic 80% of Vce 430F D.U.T.
10% Vce Ic
90% Ic 5% Ic
td(off)
tf
Eoff =
t1+5S Vce ic dt t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
trr Ic
Qrr =
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
td(on)
tr
5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
DIODE RECOVERY WAVEFORMS
t4 Erec = Vd id dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
IRGBC30KD2-S
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
L 1000V 50V 6000F 100V Vc*
D.U.T.
R L= 0 - 480V
480V 4 X IC @25C
Fig. 19 - Clamped Inductive Load Test Circuit
4.69 (0.185)
Fig. 20 - Pulsed Collector Current Test Circuit
4.20 (0.165)
1.32 (0.052)
10.54 (0.415)
10.29 (0.405)
1.40 (0.055) MAX. 4
1.22 (0.048)
10.67 (0.420)
15.49 (0.610) 14.73 (0.580) 9.91 (0.390) 1 2 3
2
LEAD ASSIGNMENTS 1 - GATE 2 - COLLECTOR 3 - EMITTER 4 - COLLECTOR
1.78 (0.070) 1.27 (0.050) 2.79 (0.110) 2.29 (0.090)
5 TYP.
1.15 (0.045) MIN.
1.40 (0.055)
0.64 (0.025)
0.46 (0.018)
0.010 (0.004)
1.15 (0.045) 0.93 (0.037) 0.69 (0.027)
2.54 (0.100) 5.08 (0.200) REF.
2.89 (0.114) 2.64 (0.104)
OUTLINE SMD-220
Dimensions in Millimeters and (Inches)

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